MECHANISM OF BIAS-ENHANCED NUCLEATION AND HETEROEPITAXY OF DIAMOND ON SI

被引：45

作者：

ROBERTSON, J

机构：

[1] Engineering Department, Cambridge University, Cambridge

来源：

DIAMOND AND RELATED MATERIALS | 1995年 / 4卷 / 5-6期

关键词：

NUCLEATION; MICROWAVE PLASMA CVD; ION-ASSISTED DEPOSITION; SUBSTRATE BIAS;

D O I：

10.1016/0925-9635(94)05288-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nucleation of diamond deposited on Si is enhanced by a negative substrate bias. It is proposed that incident CHX+ ions with 70-80 eV energy stabilise a graphitic C overlayer, with some layers oriented normal to the surface. Diamond nucleates on the layer edges. The graphitic amorphous carbon acts as a buffer layer to accommodate the 2:3 lattice mismatch between diamond and Si, without requiring an excessive density of dislocations or dangling bonds.

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页码：549 / 552

页数：4

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