HETEROEPITAXIAL GROWTH OF CDTE ON INSB BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

SUGIURA, O

TANAKA, Y

SHIINA, K

MATSUMURA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 19期

关键词：

D O I：

10.1063/1.98620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1515 / 1517

页数：3

共 11 条

[1]

ASAUSKAS R, 1980, SOV PHYS SEMICOND+, V14, P1377

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956

[3] GROWTH OF CDTE ON INSB BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :678-680

[4] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[5] LOW-TEMPERATURE METALORGANIC GROWTH OF CDTE AND HGTE FILMS USING DITERTIARYBUTYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1669-1671

[6] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956

[7] PHOTON ASSISTED OMVPE GROWTH OF CDTE [J].

KISKER, DW ;

FELDMAN, RD .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :102-107

[8]

KISKER DW, 1987, APPL PHYS LETT, V50, P1682

[9] EPITAXIAL HG1-XCDX TE GROWTH BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

LU, PY ;

WANG, CH ;

WILLIAMS, LM ;

CHU, SNG ;

STILES, CM .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1372-1374

[10] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS [J].

MULLIN, JB ;

IRVINE, SJC ;

ASHEN, DJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :92-106

← 1 2 →