EPITAXIAL HG1-XCDX TE GROWTH BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：75

作者：

LU, PY

WANG, CH

WILLIAMS, LM

CHU, SNG

STILES, CM

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 20期

关键词：

D O I：

10.1063/1.97328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1372 / 1374

页数：3

共 10 条

[1] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS [J].

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BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781

[2] METALORGANIC GROWTH OF HIGH-PURITY HGCDTE FILMS [J].

HOKE, WE ;

LEMONIAS, PJ ;

TRACZEWSKI, R .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1092-1094

[3] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[4] LOW-TEMPERATURE METALORGANIC GROWTH OF CDTE AND HGTE FILMS USING DITERTIARYBUTYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1669-1671

[5] METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :398-400

[6] PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE [J].

IRVINE, SJC ;

MULLIN, JB ;

TUNNICLIFFE, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :188-193

[7] PHOTON ASSISTED OMVPE GROWTH OF CDTE [J].

KISKER, DW ;

FELDMAN, RD .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :102-107

[8] RECENT DEVELOPMENTS IN THE MOVPE OF II-VI-COMPOUNDS [J].

MULLIN, JB ;

IRVINE, SJC ;

GIESS, J ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :1-12

[9] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS [J].

MULLIN, JB ;

IRVINE, SJC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :178-181

[10]

WANG CH, 1986, APPL PHYS LETT, V48, P1085, DOI 10.1063/1.96605

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