Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devices

被引：19

作者：

Steckl, AJ ^{[1
]}

Chen, P ^{[1
]}

Jackson, HE ^{[1
]}

Choo, AG ^{[1
]}

Cao, X ^{[1
]}

Boyd, JT ^{[1
]}

Kumar, M ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT PHYS,CINCINNATI,OH 45221

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期

关键词：

D O I：

10.1116/1.588396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of GaAs-based optoelectronic components by the technique of focused ion beam (FIB) implantation mixing is reviewed. The basic mechanisms and practice of the FIB-induced mixing process of GaAs/AlGaAs multiple quantum well and superlattice structures are discussed, The use of the FIB mixing technique for the fabrication of optoelectronic devices (such as channel waveguides and distributed Bragg reflection distributed feedback lasers) by the single-step, maskless/resistless FIB implantation process is described and their characteristics are reviewed. (C) 1995 American Vacuum Society.

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页码：2570 / 2575

页数：6

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