STUDY OF THE INTERDIFFUSION OF GAAS-ALGAAS INTERFACES DURING RAPID THERMAL ANNEALING OF ION-IMPLANTED STRUCTURES

被引：26

作者：

KAHEN, KB

RAJESWARAN, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：545 / 551

页数：7

共 29 条

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