ANALYSIS OF THERMAL-STRESSES INDUCED IN SILICON DURING XENON ARC LAMP FLASH ANNEALING

被引：31

作者：

BENTINI, GG

CORRERA, L

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2057 / 2062

页数：6

共 18 条

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[8] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J].

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[9]

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[10]

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