RADIATION HARDENED MICRON AND SUBMICRON MOSFETS CONTAINING FLUORINATED OXIDES

被引：24

作者：

NISHIOKA, Y ^{[1
]}

OHYU, K ^{[1
]}

OHJI, Y ^{[1
]}

KATO, M ^{[1
]}

DASILVA, EF ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2116 / 2123

页数：8

共 20 条

[1] RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES [J].

DASILVA, EF ;

NISHIOKA, Y ;

MA, TP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1190-1195

[2] ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

BEEGLE, RW ;

DRESSENDORFER, PV ;

DRAPER, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4369-4375

[3] MEASUREMENT OF RADIATION-INDUCED INTERFACE TRAPS USING MOSFETS [J].

GAITAN, M ;

RUSSELL, TJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1256-1260

[4]

GALLOWAY KF, 1984, IEEE T NUCL SCI, V31, P1487

[5] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

[6] INFLUENCE OF FLUORINE ON OXIDATION-INDUCED STACKING-FAULTS [J].

ISOMAE, S ;

TAMURA, H ;

TSUYAMA, H .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :293-294

[7] MECHANICAL-STRESS DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES [J].

KASAMA, K ;

TOYOKAWA, F ;

TSUKIJI, M ;

SAKAMOTO, M ;

KOBAYASHI, K .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1210-1215

[8]

LONG W, 1988, J ELECTROCHEM SOC, V135, pC135

[9] DIELECTRIC CHARACTERISTICS OF FLUORINATED ULTRADRY SIO2 [J].

NISHIOKA, Y ;

OHJI, Y ;

MUKAI, K ;

SUGANO, T ;

WANG, Y ;

MA, TP .

APPLIED PHYSICS LETTERS, 1989, 54 (12) :1127-1129

[10] DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2 [J].

NISHIOKA, Y ;

DASILVA, EF ;

WANG, Y ;

MA, TP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :38-40

← 1 2 →