MECHANICAL-STRESS DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES

[1] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1461 - 1466

[2] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[3] GATE-WIDTH DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS IN METAL-SIO2/SI DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 883 - 885

[4] RADIATION EFFECTS IN TASIX POLYSILICON MOS GATE STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 723 - 729

[5] FENG ZC, 1983, J APPL PHYS, V54, P83, DOI 10.1063/1.331690

[6] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1497 - 1501

[7] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1958, 112 (01): : 136 - 140

[8] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[9] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[10] KASAMA K, 1986, 3RD P INT WORKSH FUT, P35

[1] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1461 - 1466

[2] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[3] GATE-WIDTH DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS IN METAL-SIO2/SI DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 883 - 885

[4] RADIATION EFFECTS IN TASIX POLYSILICON MOS GATE STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 723 - 729

[5] FENG ZC, 1983, J APPL PHYS, V54, P83, DOI 10.1063/1.331690

[6] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1497 - 1501

[7] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1958, 112 (01): : 136 - 140

[8] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[9] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[10] KASAMA K, 1986, 3RD P INT WORKSH FUT, P35