GROWTH OF HIGH MOBILITY EPITAXIAL THIN-FILMS OF PB0.8SN0.2TE BY VACUUM EVAPORATION

被引：1

作者：

DAWAR, AL

KUMAR, P

PARADKAR, SK

TANEJA, OP

MATHUR, PC

机构：

[1] DEF SCI LAB,DELHI 110054,INDIA

[2] REG COLL EDUC,AJMER,INDIA

[3] GOVT COLL,HARYANA,INDIA

来源：

INFRARED PHYSICS | 1982年 / 22卷 / 03期

关键词：

D O I：

10.1016/0020-0891(82)90031-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：133 / 137

页数：5

共 16 条

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[7] VOLTAGE READOUT OF A TEMPERATURE-CONTROLLED THIN-FILM THICKNESS MONITOR [J].

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[8]

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[9] LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB-0.85SN-0.15TE DIODE-LASER WITH CONTROLLED CARRIER CONCENTRATION [J].

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[10]

PUTLEY EH, 1968, HALL EFFECT SEMICOND, P42

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