SURFACE KINETICS AND GROWTH INTERRUPTION IN MOLECULAR-BEAM EPITAXY OF COMPOUND SEMICONDUCTORS - A COMPUTER-SIMULATION STUDY

被引：14

作者：

GHAISAS, SV ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI & PHYS,LOS ANGELES,CA 90089

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3872 / 3876

页数：5

共 18 条

[1] EXISTENCE OF METASTABLE STEP DENSITY DISTRIBUTIONS ON GAAS(100) SURFACES AND THEIR CONSEQUENCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH
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[2] CHEN P, 1987, P SPIE C GROWTH COMP, V796, P118
[3] SURFACE EFFECTS AND GROWTH DYNAMICS IN MBE OF III-V COMPOUNDS
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[J]. SURFACE SCIENCE, 1986, 178 (1-3) : 110 - 123
[4] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS
KIM, JY
CHEN, P
VOILLOT, F
MADHUKAR, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 739 - 741
[5] KIM JY, 1987, THESIS U SO CALIFORN
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS
LEWIS, BF
GRUNTHANER, FJ
MADHUKAR, A
LEE, TC
FERNANDEZ, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1317 - 1322
[7] THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS
MADHUKAR, A
GHAISAS, SV
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01): : 1 - 130
[8] A COMBINED COMPUTER-SIMULATION, RHEED INTENSITY DYNAMICS AND PHOTOLUMINESCENCE STUDY OF THE SURFACE KINETICS CONTROLLED INTERFACE FORMATION IN MBE GROWN GAAS/ALXGA1-XAS(100) QUANTUM-WELL STRUCTURES
MADHUKAR, A
CHEN, P
VOILLOT, F
THOMSEN, M
KIM, JY
TANG, WC
GHAISAS, SV
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 26 - 33
[9] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1148 - 1150
[10] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY
MADHUKAR, A
GHAISAS, SV
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 247 - 249

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