DEFECTS IN ELECTRON-IRRADIATED GAINP

We present a characterization of the defects created by electron irradiation at room temperature in n-type GaInP. Four electron traps, labeled E1-E4, and no hole traps have been detected using deep level transient spectroscopy in the temperature range 4-400 K. The corresponding energy levels and barriers associated with electron capture have been measured. The introduction rates, ranging from 4 X 10(-3) to 0.4 cm-1, indicate that these defects are probably not primary defects but complexes resulting from the interaction of these primary defects between themselves or with impurities. This is not surprising, owing to the fact that defect annealing takes place below 300 K in InP.