THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN INP

被引：42

作者：

MASSARANI, B ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2470

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2470 / 2474

页数：5

共 21 条

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TEMKIN, H ;

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APPLIED PHYSICS LETTERS, 1984, 45 (05) :566-568

[2]

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[3]

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BENTON, JL ;

TEMKIN, H ;

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APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992

[5] ELECTRON-BOMBARDMENT INDUCED DEFECT STATES IN P-INP [J].

LEVINSON, M ;

TEMKIN, H ;

BONNER, WA .

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[6]

LINDSAY DJC, 1973, DEFECTS SEMICONDUCTO, P34

[7] THE COULOMB SCATTERING OF RELATIVISTIC ELECTRONS BY NUCLEI [J].

MCKINLEY, WA ;

FESHBACH, H .

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[8] ANISOTROPY OF DEFECT INTRODUCTION BY ELECTRON-IRRADIATION IN COMPOUND SEMICONDUCTORS [J].

PONS, D .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2839-2846

[9] ANISOTROPIC-DEFECT INTRODUCTION IN GAAS BY ELECTRON-IRRADIATION [J].

PONS, D ;

BOURGOIN, J .

PHYSICAL REVIEW LETTERS, 1981, 47 (18) :1293-1296

[10] ENERGY-DEPENDENCE OF DEEP LEVEL INTRODUCTION IN ELECTRON-IRRADIATED GAAS [J].

PONS, D ;

MOONEY, PM ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2038-2042

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