MISCIBILITY GAPS IN QUATERNARY-III-V ALLOYS

被引：326

作者：

STRINGFELLOW, GB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 58卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90226-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：194 / 202

页数：9

共 40 条

[11] THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS [J].

LAW, HD ;

CHIN, R ;

NAKANO, K ;

MILANO, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :275-283

[12]

LIGHTOWLERS EC, 1972, J ELECTRON MATER, V1, P39

[13] OBSERVATION OF CHARGE STORAGE AND CHARGE-TRANSFER IN A GAALASSB-GASB CHARGE-COUPLED DEVICE [J].

LIU, YZ ;

DEYHIMY, I ;

HARRIS, JS ;

ANDERSON, RJ ;

APPELBAUM, J ;

POLLARD, JH .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :458-461

[14]

MANABE JB, 1971, JPN J APPL PHYS, V10, P1466

[15]

MANCHON DD, 1974, J ELECTROCHEM SOC, V121, P996

[16]

Moon R. L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P859

[17] MISCIBILITY OF 3-V SEMICONDUCTORS STUDIED BY FLASH EVAPORATION [J].

MULLER, EK ;

RICHARDS, JL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1233-&

[18]

Mullin J. B., 1973, Journal of Luminescence, V7, P176, DOI 10.1016/0022-2313(73)90066-5

[19] THERMODYNAMICAL ANALYSIS FOR VAPOR GROWTH OF GAXIN1-XAS CRYSTALS [J].

NAGAI, H ;

SHIBATA, T ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) :1337-&

[20] LIQUID-PHASE EPITAXY OF ALYGA1-YAS1-XSBX AND IMPORTANCE OF STRAIN EFFECTS NEAR MISCIBILITY GAP [J].

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED ;

DEWINTER, JC ;

ILEGEMS, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1053-1058

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