MAGNETIC-FIELD EFFECTS AND INTRINSIC BISTABILITY IN RESONANT TUNNELING SYSTEMS

被引：18

作者：

POTZ, W

机构：

[1] Department of Physics, University of Illinois at Chicago, Chicago, IL 60680

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.41.12111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical study of resonant tunneling in double-barrier heterostructures in the presence of longitudinal magnetic fields is presented. Self-consistent treatment of charge injection and the effective carrier potential considerably improve agreement between theory and experimental results. Charging of the well is found to induce intrinsic current bistability and significantly reduces magnetic-field-induced fluctuations in the differential conductivity. The width of the bistable voltage region and the peak current are found to vary as a function of the magnetic field. © 1990 The American Physical Society.

引用

页码：12111 / 12116

页数：6

共 12 条

[1]

BANDO H, 1987, JPN J APPL PHYS S26, V26

[2] RESONANT TUNNELING VIA LANDAU-LEVELS IN GAAS-GA1-XALXAS HETEROSTRUCTURES [J].