ANALYTICAL MODELING OF THE SUBTHRESHOLD CURRENT IN SHORT-CHANNEL MOSFETS

被引：10

作者：

POOLE, DR

KWONG, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 06期

关键词：

D O I：

10.1109/EDL.1986.26394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：340 / 343

页数：4

共 16 条

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[7] TWO-DIMENSIONAL ANALYTICAL MODELING OF THRESHOLD VOLTAGES OF SHORT-CHANNEL MOSFETS [J].

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KWONG, DL .

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[8]

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[9] CALIBRATED MODEL FOR THE SUB-THRESHOLD OPERATION OF A SHORT CHANNEL MOSFET INCLUDING SURFACE-STATES [J].

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