POLAR OPTICAL PHONON LIMITED ENERGY AND MOMENTUM RELAXATION OF HOT-ELECTRONS IN A GAAS-QUANTUM WELL (QW)

被引：4

作者：

VASS, E

机构：

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1987年 / 67卷 / 04期

关键词：

D O I：

10.1007/BF01304110

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：435 / 442

页数：8

共 23 条

[1] POLAR OPTICAL-PHONON SCATTERING MOBILITY IN SEMICONDUCTOR QUANTUM-WELLS [J].

CHATTOPADHYAY, D .

PHYSICAL REVIEW B, 1986, 33 (10) :7288-7290

[2] RATE OF ENERGY LOSS TO POLAR MODES [J].

CONWELL, EM .

PHYSICAL REVIEW, 1966, 143 (02) :657-&

[3] SCATTERING BY POLAR-OPTICAL PHONONS IN A QUASI-2-DIMENSIONAL SEMICONDUCTOR [J].

FERRY, DK .

SURFACE SCIENCE, 1978, 75 (01) :86-91

[4]

GORNIK E, IN PRESS NATO ADV ST

[5] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

HESS, K .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486

[6] SIZE EFFECTS ON POLAR OPTICAL PHONON-SCATTERING OF 1-D AND 2-D ELECTRON-GAS IN SYNTHETIC SEMICONDUCTORS [J].

LEBURTON, JP .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2850-2855

[7] TWO-DIMENSIONAL BALANCE-EQUATIONS IN NONLINEAR ELECTRONIC TRANSPORT AND APPLICATION TO GAAS-GAALAS HETEROJUNCTIONS [J].

LEI, XL ;

BIRMAN, JL ;

TING, CS .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2270-2279

[8] DYNAMICAL SCREENING AND CARRIER MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].

LEI, XL .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :L593-L597

[9] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

PRICE, PJ ;

HEIBLUM, M .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :294-296

[10] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].

PRICE, PJ .

ANNALS OF PHYSICS, 1981, 133 (02) :217-239

← 1 2 3 →