REDUCTION OF DEFECTS IN LASER-INDUCED CRYSTALLIZED AND AMORPHIZED SILICON FILMS USING PLASMA HYDROGENATION

被引：16

作者：

SAMESHIMA, T

SEKIYA, M

HARA, M

SANO, N

KOHNO, A

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN

[2] KYUSHU UNIV,FAC SCI,FUKUOKA 812,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.357962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250°C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm-3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm-3 eV -1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.

引用

页码：7377 / 7383

页数：7

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