REMOTE PLASMA HYDROGENATION OF ION-BEAM AMORPHIZED SILICON

被引：7

作者：

KAR, S

PANKOVE, JI

TSUO, YS

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

[2] UNIV COLORADO,DEPT ELECT & COMP ENGN,BOULDER,CO 80309

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this investigation, the efficacy of remote plasma hydrogenation, in the passivation of bonding and other electronic defects in amorphous silicon, has been compared with those of ion beam and radio-frequency plasma hydrogenations. The amorphous silicon film was obtained by amorphization of the subsurface of ultrapure crystalline silicon by a Si ion beam. Electrical measurements indicated remote plasma hydrogenation to be a promising low-temperature defect removal technique, without the damaging effect of a plasma or the etching effects of low-energy hydrogen ions.

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页码：718 / 720

页数：3

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