DETERMINATION OF SILICON-SILICON DIOXIDE INTERFACE STATE PROPERTIES FROM ADMITTANCE MEASUREMENTS UNDER ILLUMINATION

被引：71

作者：

KAR, S ^{[1
]}

VARMA, S ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,ADV CTR MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：4256 / 4266

页数：11

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