FORMATION OF VERY THIN ANODIC OXIDE OF INSB

被引：11

作者：

FUJISADA, H ^{[1
]}

NAKAGAWA, T ^{[1
]}

SASASE, T ^{[1
]}

机构：

[1] HAMAMATSU PHOTON KK,HAMAMATSU 435,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 08期

关键词：

D O I：

10.1143/JJAP.22.L525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

12

引用

收藏

页码：L525 / L527

页数：3

相关论文

共 12 条

[1] NEW PHOTOVOLTAIC RESPONSE IN SURFACE OF N-TYPE INSB
AXT, CJ
ROGERS, CG
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3423 - +
[2] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T)
CHANG, LL
HOWARD, WE
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &
[3] DEWALD JF, 1957, J ELECTROCHEM SOC, V104, P245
[4] INFLUENCE OF SEMICONDUCTOR-OXIDE INTERLAYER ON AC-BEHAVIOUR OF INSB MOS-CAPACITORS
HEIME, A
PAGNIA, H
[J]. APPLIED PHYSICS, 1978, 15 (01): : 79 - 84
[5] SURFACE STUDY OF ANODIZED INDIUM ANTIMONIDE
HUNG, RY
YON, ET
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2185 - +
[6] EFFECTS OF LIGHT ON CHARGE STATE OF INSB-MOS DEVICES
KRAG, WE
PHELAN, RJ
DIMMOCK, JO
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3661 - &
[7] METHOD OF SEPARATING HYSTERESIS EFFECTS FROM MIS CAPACITANCE MEASUREMENTS
NAKAGAWA, T
FUJISADA, H
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 348 - 350
[8] IMAGING AND STORAGE WITH A UNIFORM MOS STRUCTURE
PHELAN, RJ
DIMMOCK, JO
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (11) : 359 - &
[9] INSB MOS INFRARED DETECTOR
PHELAN, RJ
DIMMOCK, JO
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 55 - &
[10] FORMATION AND PROPERTIES OF ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE
SAKURAI, T
SUZUKI, T
NOGUCHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (12) : 1491 - &