NEW PHOTOVOLTAIC RESPONSE IN SURFACE OF N-TYPE INSB

[1] ANODIC OXIDATION OF INSB IN NONAQUEOUS ELECTROLYTES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 391 - &

[2] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &

[3] SURFACE STATES ON THE (III) SURFACE OF INDIUM ANTIMONIDE [J]. SURFACE SCIENCE, 1964, 2 : 33 - 39

[4] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 244 - 251

[5] SURFACE CONDUCTANCE ON P-TYPE INSB AT 77 DEGREES K [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1473 - &

[6] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &

[7] GRI NJ, 1968, THESIS U CINCINNATI

[8] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[9] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2967 - &

[10] INSULATED GATE TUNNEL JUNCTION TRIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) : 66 - &

[1] ANODIC OXIDATION OF INSB IN NONAQUEOUS ELECTROLYTES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 391 - &

[2] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &

[3] SURFACE STATES ON THE (III) SURFACE OF INDIUM ANTIMONIDE [J]. SURFACE SCIENCE, 1964, 2 : 33 - 39

[4] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 244 - 251

[5] SURFACE CONDUCTANCE ON P-TYPE INSB AT 77 DEGREES K [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1473 - &

[6] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &

[7] GRI NJ, 1968, THESIS U CINCINNATI

[8] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[9] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2967 - &

[10] INSULATED GATE TUNNEL JUNCTION TRIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) : 66 - &