LATERAL CURRENT INJECTION INGAAS/INALAS MQW LASERS GROWN BY GSMBE/LPE HYBRID METHOD

被引：17

作者：

KAWAMURA, Y

NOGUCHI, Y

IWAMURA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lateral current injection InGaAs/InAlAs MQW laser is fabricated using a gas-source molecular beam epitaxy/liquid phase epitaxy hybrid growth method for the first time. Room temperature CW operation with a threshold current of 40 mangstrom is achieved. The lasing wavelength is 1,535 mum. The capacitance of the laser is as low as 0.38 pF at zero bias.

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页码：102 / 104

页数：3

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