GAINASP/ALGAINP-BASED NEAR-IR (780NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：7

作者：

SCHNEIDER, RP

HAGEROTTCRAWFORD, M

机构：

[1] Sandia National Laboratories, Center for Compound Semiconductor Technologies, Albuquerque, NM 87185-0603

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 07期

关键词：

GALLIUM INDIUM ARSENIDE; VERTICAL CAVITY SURFACE; EMITTING LASERS;

D O I：

10.1049/el:19950397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Near-infra-red (760-780nm) vertical-cavity surface-emitting laser (VCSEL) diodes with GaInAsP-based active-region heterostructures are demonstrated for the first time. The devices consist of GaInAsP/GaInP/AlGaInP-based quantum-well active regions and AlAs/Al0.25Ga0.75As distributed Bragg reflectors. Different-sized devices emitting in the 760-780nm-wavelength range exhibit threshold currents in the 3-10mA range, threshold voltages of 2.1 V and peak power output > 4mW.

引用

收藏

页码：554 / 556

页数：3

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