RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS .1. PROPOSAL OF A NEW MODEL FOR DIRECTIONAL GROWTH OF DISLOCATION NETWORKS

被引：29

作者：

MATSUI, J ^{[1
]}

ISHIDA, K ^{[1
]}

NANNICHI, Y ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 10期

关键词：

D O I：

10.1143/JJAP.14.1555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1555 / 1560

页数：6

共 18 条

[1]

CHIKAWA J, 1974, J CRYST GROWTH, V24, P61, DOI 10.1016/0022-0248(74)90281-4

[2] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J].

DELOACH, BC ;

HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044

[3] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252

[4]

ISHIDA K, 1975, PHYS STATUS SOLIDI A, V31

[5] GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS [J].

ITO, R ;

NAKASHIMA, H ;

NAKADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) :1321-1322

[6]

JOHNSON DW, 1973, APPL PHYS LETT, V23, P192

[7]

Johnston W J., 1957, DISLOCATIONS MECH PR, P116

[8] THE NATURE OF WORK-HARDENING [J].

KOEHLER, JS .

PHYSICAL REVIEW, 1952, 86 (01) :52-59

[9] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[10] RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS .2. SEMIQUANTITATIVE ANALYSES ON PROPAGATION OF DARK LINE DEFECTS [J].

NANNICHI, Y ;

MATSUI, J ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) :1561-1568

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