HIGH-PRESSURE DETERMINATION OF ALGAINP BAND-STRUCTURE

被引：26

作者：

PRINS, AD ^{[1
]}

SLY, JL ^{[1
]}

MENEY, AT ^{[1
]}

DUNSTAN, DJ ^{[1
]}

OREILLY, EP ^{[1
]}

ADAMS, AR ^{[1
]}

VALSTER, A ^{[1
]}

机构：

[1] PHILIPS OPTOELECTR CTR,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

SEMICONDUCTORS; HIGH PRESSURE; ELECTRONIC STRUCTURE; LUMINESCENCE;

D O I：

10.1016/0022-3697(94)00206-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Low temperature photoluminescence measurements have been carried out at hydrostatic pressures up to 80 kbar to determine the band structure of the disordered (AlxGa1-x)(0.5)In0.5P alloy system. Using a series of specifically designed samples we have measured how the Gamma, L and X conduction band energies vary with strain and aluminium content. The direct band gap varies linearly from that of GaInP at a rate of 0.61x eV. The position of the X minimum in GaInP is found to be 280 meV above the Gamma, increasing linearly with aluminium content at a rate of 0.085x eV. Measurements of unstrained and 1% compressively strained GaInP put tower limits on the Gamma(c)-L(c) separation of 125 meV and 175 meV, respectively.

引用

页码：349 / 352

页数：4

共 17 条

[1] BAND-STRUCTURE ENHANCEMENT OF INDIRECT TRANSITIONS [J].