ROLE OF DOPANTS IN PRESSURE-INDUCED EFFECTS IN GLASSY GESE3.5 CONTAINING BI AND SB

被引：43

作者：

BHATIA, KL ^{[1
]}

PARTHASARATHY, G ^{[1
]}

GOSAIN, DP ^{[1
]}

GOPAL, ESR ^{[1
]}

机构：

[1] INDIAN INST SCI, INSTRUMENTAT & SERV UNIT, BANGALORE 560012, KARNATAKA, INDIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 51卷 / 06期

关键词：

D O I：

10.1080/13642818508243146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L63 / L68

页数：6

共 15 条

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BHATIA, KL .

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[3]

BHATIA KL, 1983, J NON-CRYST SOLIDS, V58, P151

[4] PRESSURE-INDUCED EFFECTS IN BULK AMORPHOUS N-TYPE SEMICONDUCTORS (GESE3.5)100-XBIX [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 69 (2-3) :189-202

[5] ELECTRICAL TRANSPORT IN BI DOPED N-TYPE AMORPHOUS-SEMICONDUCTORS (GESE3.5)100-XBIX AT HIGH-PRESSURE [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1019-1021

[6]

BHATIA KL, 1985, SOLID STATE COMMUN

[7]

BORISOVA ZV, 1981, GLASSY SEMICONDUCTOR, pCH5

[8]

GERASIMENKO VS, 1976, FIX KHIM STELKA, V2, P275

[9] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .4. ANDERSON LOCALIZATION IN A DISORDERED LATTICE [J].

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PHILOSOPHICAL MAGAZINE, 1970, 22 (175) :7-&

[10]

MOTT NF, 1979, ELECTRONIC PROCESSES, pCH9

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