CONTACT RESISTANCE MEASUREMENTS FOR HYDROGENATED AMORPHOUS-SILICON SOLAR-CELL STRUCTURES

被引:15
作者
SCHADE, H
SMITH, ZE
机构
关键词
D O I
10.1063/1.336431
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1682 / 1687
页数:6
相关论文
共 15 条
[1]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[2]  
BEYER W, 1984, SEMICONDUCTORS SEM C, V21, pCH8
[3]   CONTACT RESISTANCE AND METHODS FOR ITS DETERMINATION [J].
COHEN, SS .
THIN SOLID FILMS, 1983, 104 (3-4) :361-379
[4]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[5]  
HANAK JJ, 1979, 2ND P EUR COMM PHOT, P270
[6]   SILICON-GERMANIUM-BORON TERNARY AMORPHOUS ALLOY [J].
MURASE, K ;
TAKEDA, A ;
MIZUSHIMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (04) :561-566
[7]   AMORPHOUS SILICON-GERMANIUM-BORON ALLOY APPLIED TO LOW-LOSS AND HIGH-SPEED DIODES [J].
MURASE, K ;
AMEMIYA, Y ;
MIZUSHIMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (11) :1559-1565
[8]   MEASUREMENT OF CONTACT RESISTANCE BETWEEN METAL AND DIFFUSION LAYER IN SI PLANAR ELEMENTS [J].
MURRMANN, H ;
WIDMANN, D .
SOLID-STATE ELECTRONICS, 1969, 12 (11) :879-&
[9]  
SANCHEZSINENCIO F, 1983, J APPL PHYS, V54, P2457
[10]   OPTICAL-PROPERTIES AND QUANTUM EFFICIENCY OF A-SI1-XCX-H/A-SI-H SOLAR-CELLS [J].
SCHADE, H ;
SMITH, ZE .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :568-574