AMORPHOUS SILICON-GERMANIUM-BORON ALLOY APPLIED TO LOW-LOSS AND HIGH-SPEED DIODES

被引：17

作者：

MURASE, K

AMEMIYA, Y

MIZUSHIMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.1559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1559 / 1565

页数：7

共 9 条

[1] NOVEL LOW-LOSS AND HIGH-SPEED DIODE UTILIZING AN IDEAL OHMIC CONTACT [J].

AMEMIYA, Y ;

SUGETA, T ;

MIZUSHIMA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :236-243

[2]

AMEMIYA Y, UNPUB IEEE T ELECTRO

[3] DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON [J].

HIROSE, M ;

TANIGUCHI, M ;

NAKASHITA, T ;

OSAKA, Y ;

SUZUKI, T ;

HASEGAWA, S ;

SHIMIZU, T .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :297-302

[4] ELECTRONS IN DISORDERED STRUCTURES [J].

MOTT, NF .

ADVANCES IN PHYSICS, 1967, 16 (61) :49-+

[5]

MOTT NF, 1979, ELECTRONIC PROCESSES, P104

[6] SILICON-GERMANIUM-BORON TERNARY AMORPHOUS ALLOY [J].

MURASE, K ;

TAKEDA, A ;

MIZUSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (04) :561-566

[7] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON [J].

PANKOVE, JI ;

LAMPERT, MA ;

TARNG, ML .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :439-441

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P375

← 1 →