NOVEL LOW-LOSS AND HIGH-SPEED DIODE UTILIZING AN IDEAL OHMIC CONTACT

被引：20

作者：

AMEMIYA, Y

SUGETA, T

MIZUSHIMA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：236 / 243

页数：8

共 11 条

[1] 2-TERMINAL ASYMMETRICAL AND SYMMETRICAL SILICON NEGATIVE RESISTANCE SWITCHES [J].

ALDRICH, RW ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) :1819-1824

[2]

Ghandi S., 1977, SEMICONDUCTOR POWER, V1st

[3] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J].

HAUSER, JR ;

DUNBAR, PM .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :715-716

[4] 2 DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON N-P-N TRANSISTOR [J].

HEIMEIER, HH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) :708-714

[5] ANALYSIS OF IMPURITY ATOM DISTRIBUTION NEAR DIFFUSION MASK FOR A PLANAR P-N JUNCTION [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (03) :179-&

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[7] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J].

SLOTBOOM, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) :669-679

[8]

SMITH RA, 1976, P IEEE IAS ANN M, P60

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10]

TARUI Y, 1969, IEEE SOLID STATE CIR, V4

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