ELECTROLUMINESCENCE FROM POROUS SILICON AFTER METAL-DEPOSITION INTO THE PORES

被引：49

作者：

STEINER, P

KOZLOWSKI, F

LANG, W

机构：

[1] Fraunhofer-Institute for Solid State Technology, 80686 Munich

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

ELECTROCHEMISTRY; INDIUM; LUMINESCENCE; SILICON;

D O I：

10.1016/0040-6090(94)05602-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium and aluminum can be deposited into the pores of porous silicon by an electroplating process. The electroluminescence efficiency is highly increased by this process. The impact of the metals on the luminescence is interpreted by a doping effect of In and Al with respect to the n-type silicon.

引用

页码：49 / 51

页数：3

共 11 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].