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BLUE AND GREEN ELECTROLUMINESCENCE FROM A POROUS SILICON DEVICE

被引：59
作者：
STEINER, P
KOZLOWSKI, F
LANG, W
机构：
[1] Fraunhofer Institute for Solid State Technology
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 07期
关键词：
D O I：
10.1109/55.225558
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication and the characteristics of light-emitting porous silicon devices are presented. A nanoporous layer on n-substrate is formed under the influence of UV illumination during anodization. The wafer shows weak photoluminescence with a maximum at 640 nm. The porous layer is contacted by pads consisting of semitransparent gold. When voltage is applied, electroluminescence in the 560- to 480-nm range can be observed. The current-voltage characteristic is strongly rectifying. Light emission occurs under forward bias. A possible model for the shift of the electroluminescence towards higher energies is given.
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收藏
页码：317 / 319
页数：3
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