INFLUENCE OF A SURFACE ELECTRIC-FIELD ON THE LINE-SHAPE OF THE EXCITONIC EMISSION IN GAAS

被引：13

作者：

SCHULTHEIS, L

TU, CW

机构：

[1] BELL COMMUN RES,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.32.6978

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6978 / 6981

页数：4

共 19 条

[1]

ARONOV AG, 1982, EXCITONS, pCH7

[2] POLARITON LUMINESCENCE AND ADDITIONAL BOUNDARY-CONDITIONS - COMPARISON BETWEEN THEORY AND EXPERIMENT [J].

ASKARY, F ;

YU, PY .

SOLID STATE COMMUNICATIONS, 1983, 47 (04) :241-246

[3] IMPACT IONIZATION OF EXCITONS IN GAAS [J].

BLUDAU, W ;

WAGNER, E .

PHYSICAL REVIEW B, 1976, 13 (12) :5410-5414

[4] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF A METAL/AL0.5GA0.5AS/GAAS CAPACITOR [J].

DRUMMOND, TJ ;

FISCHER, R ;

ARNOLD, D ;

MORKOC, H ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :214-216

[5] PHOTO-LUMINESCENCE OF PURE GAAS CRYSTALS CLEAVED IN ULTRAHIGH-VACUUM [J].

FISCHER, B ;

STOLZ, HJ .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :56-58

[6] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS [J].

HEIBLUM, M ;

MENDEZ, EE ;

OSTERLING, L .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6982-6988

[7] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[8] FIELD-EFFECT OF GAAS PHOTOLUMINESCENCE IN GAP-GAAS AND GA0.3AL0.7 AS-GAAS HETEROJUNCTIONS [J].

HORIKOSHI, Y ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (09) :1325-+

[9]

KOTELES ES, 1985, 17TH P INT C PHYS SE

[10] SEARCH FOR INTERFACE STATES IN AN LPE GAAS-ALGA1-XAS HETEROJUNCTION [J].

LANG, DV ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :683-684

← 1 2 →