SEARCH FOR INTERFACE STATES IN AN LPE GAAS-ALGA1-XAS HETEROJUNCTION

被引：34

作者：

LANG, DV ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 10期

关键词：

D O I：

10.1063/1.89503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：683 / 684

页数：2

相关论文

共 14 条

[1] ALFEROV ZI, 1975, SOV PHYS SEMICOND+, V9, P305
[2] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES
ASBECK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 820 - 822
[3] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[4] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS
CASEY, HC
CHO, AY
BARNES, PA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470
[5] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
DIXON, RW
CASEY, HC
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503
[6] ETTENBERG M, 1976, J APPL PHYS, V47, P631
[7] GARNER CM, 1977, B AM PHYS SOC, V22, P293
[8] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION
GOSSARD, AC
PETROFF, PM
WEIGMANN, W
DINGLE, R
SAVAGE, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325
[9] DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS
LANG, DV
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1533 - 1537
[10] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066