SUBSTITUTIONAL DOPING OF VACUUM-EVAPORATED AMORPHOUS-SILICON BY ION-IMPLANTATION

被引：6

作者：

DVURECHENSKII, AV

RYAZANTSEV, IA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 69卷 / 01期

关键词：

D O I：

10.1002/pssa.2210690170

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K117 / K120

页数：4

共 14 条

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[3] ON THE NATURE OF THE DEFECT REVERSE ANNEALING IN ION-IMPLANTED SILICON [J].

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[8]

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[9]

SHKLOVSKII BI, 1972, FIZ TEKH POLUPROV, V6, P2335

[10] DOPING OF AMORPHOUS SILICON BY ALKALI-ION IMPLANTATIONS [J].

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