FREQUENCY-DEPENDENT CONDUCTIVITY OF A STRONGLY DISORDERED TWO-DIMENSIONAL ELECTRON-GAS

被引：36

作者：

GOLD, A ^{[1
]}

ALLEN, SJ ^{[1
]}

WILSON, BA ^{[1
]}

TSUI, DC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.25.3519

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3519 / 3528

页数：10

共 24 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[2]

ADKINS CJ, 1976, J PHYSIQUE C, V37, P343

[3] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES [J].

ALLEN, SJ ;

TSUI, DC ;

DEROSA, F .

PHYSICAL REVIEW LETTERS, 1975, 35 (20) :1359-1362

[4] THE TEMPERATURE-DEPENDENCE OF THE DC CONDUCTIVITY NEAR THE ANDERSON TRANSITION IN 3-DIMENSIONAL SYSTEMS [J].

BELITZ, D ;

GOTZE, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03) :517-526

[5]

BISHOP DJ, 1980, PHYS REV LETT, V44, P1153, DOI 10.1103/PhysRevLett.44.1153

[6] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].

BLOSS, WL ;

SHAM, LJ ;

VINTER, V .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1529-1532

[7] EVIDENCE FOR A VALLEY-OCCUPANCY TRANSITION IN SI INVERSION-LAYERS AT LOW ELECTRON-DENSITIES [J].

COLE, T ;

MCCOMBE, BD ;

QUINN, JJ ;

KALIA, RK .

PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1096-1099

[8] NON-METALLIC CONDUCTION IN THIN METAL-FILMS AT LOW-TEMPERATURES [J].

DOLAN, GJ ;

OSHEROFF, DD .

PHYSICAL REVIEW LETTERS, 1979, 43 (10) :721-724

[9] TEMPERATURE-DEPENDENCE OF DYNAMIC CONDUCTIVITY OF ELECTRONS IN SURFACE INVERSION LAYER OF SEMICONDUCTING SILICON [J].

GANGULY, AK ;

TING, CS .

PHYSICAL REVIEW B, 1977, 16 (08) :3541-3545

[10] THE CONDUCTIVITY OF STRONGLY DISORDERED TWO-DIMENSIONAL SYSTEMS [J].

GOLD, A ;

GOTZE, W .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (28) :4049-4066

← 1 2 3 →