SELECTIVE MASKING EFFECTS OF WO3 RESIST ON IMPURITY DIFFUSION AND OXIDATION IN SILICON

被引：2

作者：

BABA, M

ABE, S

IKEDA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 09期

关键词：

D O I：

10.1143/JJAP.26.1561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1561 / 1564

页数：4

共 7 条

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BERNSTEIN, H ;

KURTZ, AD .

[2] A NEW INORGANIC ELECTRON RESIST USING AMORPHOUS WO-3 FILM [J].

BABA, M ;

IKEDA, T .

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

KOSHIDA, N ;

TOMITA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (01) :92-94

NEUBERT, TJ ;

ROSKELLEY, DL .

[6]

NORTON FJ, 1961, NATURE, V171, P701

[7]

RUNYAN WR, 1975, SEMICONDUCTOR MEASUR, P207