OPTOELECTRONIC PROPERTIES OF COUPLED CAVITY SEMICONDUCTOR-LASERS

被引：3

作者：

EBELING, KJ

COLDREN, LA

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.94899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：735 / 737

页数：3

相关论文

共 12 条

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE
[2] DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS
BARNES, PA
PAOLI, TL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 633 - 639
[3] COLDREN LA, UNPUB
[4] WAVELENGTH SELF STABILIZATION OF COUPLED-CAVITY SEMICONDUCTOR-LASERS
EBELING, KJ
COLDREN, LA
[J]. ELECTRONICS LETTERS, 1984, 20 (02) : 69 - 70
[5] GENERATION OF SINGLE-LONGITUDINAL-MODE SUB-NANOSECOND LIGHT-PULSES BY HIGH-SPEED CURRENT MODULATION OF MONOLITHIC 2-SECTION SEMICONDUCTOR-LASERS
EBELING, KJ
COLDREN, LA
MILLER, BI
RENTSCHLER, JA
[J]. ELECTRONICS LETTERS, 1982, 18 (21) : 901 - 902
[6] SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS
EBELING, KJ
COLDREN, LA
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 6 - 8
[7] ANALYSIS OF MULTIELEMENT SEMICONDUCTOR-LASERS
EBELING, KJ
COLDREN, LA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 2962 - 2969
[8] BISTABILITY AND NEGATIVE-RESISTANCE IN SEMICONDUCTOR-LASERS
HARDER, C
LAU, KY
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 124 - 126
[9] HENRY CR, UNPUB
[10] SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (AIGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS
PAOLI, TL
BARNES, PA
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 714 - 716