NOVEL RELAXATION PROCESS IN STRAINED SI/GE SUPERLATTICES GROWN ON GE(001)

被引：50

作者：

WEGSCHEIDER, W ^{[1
]}

EBERL, K ^{[1
]}

ABSTREITER, G ^{[1
]}

CERVA, H ^{[1
]}

OPPOLZER, H ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90°(a/6)〈211〉 Shockley partial dislocations on adjacent {111} planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples.

引用

页码：1496 / 1498

页数：3

共 15 条

[11] ON THE CORE STRUCTURE OF THE GLIDE-SET 9-DEGREES AND 3-DEGREES PARTIAL DISLOCATIONS IN SILICON [J].