CONFINEMENT OF LASER-GENERATED CARRIERS IN SEMICONDUCTORS BY INDUCED LATTICE TEMPERATURE-GRADIENTS

被引：26

作者：

VANDRIEL, HM ^{[1
]}

PRESTON, JS ^{[1
]}

GALLANT, MI ^{[1
]}

机构：

[1] UNIV TORONTO,ERINDALE COLL,MISSISSAUGA L5L 1C6,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1063/1.93111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：385 / 387

页数：3

共 39 条

[1] PICOSECOND OPTICAL MEASUREMENTS OF BAND-TO-BAND AUGER RECOMBINATION OF HIGH-DENSITY PLASMAS IN GERMANIUM
AUSTON, DH
SHANK, CV
LEFUR, P
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (15) : 1022 - 1025
[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
CAMPISANO, SU
FOTI, G
RIMINI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
[3] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE
BELL, RO
TOULEMONDE, M
SIFFERT, P
[J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319
[4] Buyco E. H, 1970, THERMOPHYSICAL PROPE, V5
[5] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P168
[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
DASH, WC
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[7] Drabble J. R., 1961, THERMAL CONDUCTION S
[8] ULTRAFAST TRANSIENT-RESPONSE OF SOLID-STATE PLASMAS .1. GERMANIUM, THEORY, AND EXPERIMENT
ELCI, A
SCULLY, MO
SMIRL, AL
MATTER, JC
[J]. PHYSICAL REVIEW B, 1977, 16 (01): : 191 - 221
[9] GALLANT M, UNPUB
[10] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
GLASSBRENNER, CJ
SLACK, GA
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +