THE PROPERTIES OF SI/SI1-XGEX FILMS GROWN ON SI SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

MANASEVIT, HM

GERGIS, IS

JONES, AB

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 04期

关键词：

D O I：

10.1007/BF02676793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：637 / 651

页数：15

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共 17 条

[1] EPITAXIAL-GROWTH OF SILICON-GERMANIUM SINGLE-CRYSTALS
AHARONI, H
BARLEV, A
BLECH, IA
MARGALIT, S
[J]. THIN SOLID FILMS, 1972, 11 (02) : 313 - &
[2] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
COLEMAN, JJ
DAPKUS, PD
YANG, JJJ
[J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608
[3] THE GROWTH AND CHARACTERIZATION OF METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD) QUANTUM WELL TRANSPORT STRUCTURES
COLEMAN, JJ
DAPKUS, PD
THOMPSON, DE
CLARKE, DR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 207 - 212
[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[5] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[6] SILICON-GERMANIUM ALLOY GROWTH-CONTROL AND CHARACTERIZATION
HALBERG, LI
NEVIN, JH
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 779 - 793
[7] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY
KASPER, E
HERZOG, HJ
KIBBEL, H
[J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205
[8] ELECTRON-MOBILITY ENHANCEMENT IN EPITAXIAL MULTILAYER SI-SI1-XGEX ALLOY-FILMS ON (100) SI
MANASEVIT, HM
GERGIS, IS
JONES, AB
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 464 - 466
[9] EPITAXIAL SILICON-GERMANIUM ALLOY FILMS ON SILICON SUBSTRATES
MILLER, KJ
GRIECO, MJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 70 - 71
[10] ODA J, 1962, JAPAN J APPL PHYS, V1, P131