MICROSCOPIC STRUCTURE OF THE NL10 HEAT-TREATMENT CENTER IN SILICON - STUDY BY ELECTRON-NUCLEAR DOUBLE-RESONANCE

被引：46

作者：

GREGORKIEWICZ, T ^{[1
]}

BEKMAN, HHPT ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

机构：

[1] POLISH ACAD SCI,PL-02668 WARSAW,POLAND

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.38.3998

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3998 / 4015

页数：18

共 35 条

[31] SITE SYMMETRY AND GROUND-STATE CHARACTERISTICS FOR THE OXYGEN DONOR IN SILICON
STAVOLA, M
LEE, KM
NABITY, JC
FREELAND, PE
KIMERLING, LC
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (24) : 2639 - 2642
[32] VANKEMP R, 1988, THESIS U AMSTERDAM
[33] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97
[34] ELECTRICAL AND INFRARED SPECTROSCOPIC INVESTIGATIONS OF OXYGEN-RELATED DONORS IN SILICON
WRUCK, D
GAWORZEWSKI, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : 557 - 564
[35] [No title captured]