TEM OBSERVATION OF DEFECTS INDUCED BY NI CONTAMINATION ON A SI(100) SURFACE

被引：16

作者：

SADAMITSU, S ^{[1
]}

SANO, M ^{[1
]}

HOURAI, M ^{[1
]}

SUMITA, S ^{[1
]}

FUJINO, N ^{[1
]}

SHIRAIWA, T ^{[1
]}

机构：

[1] OSAKA TITANIUM CO LTD, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.L333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L333 / L336

页数：4

共 7 条

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[3]

HONDA K, 1987, I PHYS C SER, V87, P463

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[5] ANALYSIS OF PLATE AND COLONY PRECIPITATES DECORATING STACKING-FAULTS IN A SINGLE-CRYSTAL SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4440-4443

[6] TEM OBSERVATION OF DEFECTS INDUCED BY CU CONTAMINATION ON SI(100) SURFACE [J].

SADAMITSU, S ;

SUMITA, S ;

FUJINO, N ;

SHIRAIWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10) :L1819-L1821

[7] CHARACTERIZATION OF HAZE-FORMING PRECIPITATES IN SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4444-4450

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