A METHOD OF QUANTITATIVE CONTAMINATION WITH METALLIC IMPURITIES OF THE SURFACE OF A SILICON-WAFER

被引：125

作者：

HOURAI, M ^{[1
]}

NARIDOMI, T ^{[1
]}

OKA, Y ^{[1
]}

MURAKAMI, K ^{[1
]}

SUMITA, S ^{[1
]}

FUJINO, N ^{[1
]}

SHIRAIWA, T ^{[1
]}

机构：

[1] OSAKA TITANIUM CO LTD, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L2361 / L2363

页数：3

相关论文

共 11 条

[1] GRAFF K, 1981, SEMICONDUCTOR SILICO, P331
[2] IMPLANTATION GETTERING OF GOLD IN SILICON
LO, MJT
SKALNIK, JG
ORDUNG, PF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1569 - 1573
[3] METAL IMPURITIES NEAR THE SIO2-SI INTERFACE
OHSAWA, A
HONDA, K
TOYOKURA, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2964 - 2969
[4] COMPARISON OF GETTERING TECHNIQUES BY MEANS OF INTENTIONAL QUANTITATIVE CU CONTAMINATION
SANO, M
HORAI, M
MIYAZAKI, M
FUJINO, N
SHIRAIWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07): : 1220 - 1223
[5] A NEUTRON-ACTIVATION ANALYSIS STUDY OF THE SOURCES OF TRANSITION GROUP METAL CONTAMINATION IN THE SILICON DEVICE MANUFACTURING PROCESS
SCHMIDT, PF
PEARCE, CW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 630 - 636
[6] CHARACTERIZATION OF HAZE-FORMING PRECIPITATES IN SILICON
SEIBT, M
GRAFF, K
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4444 - 4450
[7] SHIMAZAKI A, 1988, 16TH INT C SOL STAT, P281
[8] ANOMALOUS DIFFUSION AND GETTERING OF TRANSITION-METALS IN SILICON
SPARKS, DR
CHAPMAN, RG
ALVI, NS
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 525 - 527
[9] Suga H., 1986, J JAPANESE ASS CRYST, V13, P173
[10] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K
SZE, SM
IRVIN, JC
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &