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CHARGED-PARTICLE DENSITIES AND KINETICS IN A RADIOFREQUENCY SF6 PLASMA
被引:29
作者
:
KONO, A
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku
KONO, A
ENDO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku
ENDO, M
OHATA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku
OHATA, K
KISHIMOTO, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku
KISHIMOTO, S
GOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku
GOTO, T
机构
:
[1]
Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku
来源
:
JOURNAL OF APPLIED PHYSICS
|
1994年
/ 76卷
/ 11期
关键词
:
D O I
:
10.1063/1.358003
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
Electron, negative ion, and positive ion densities in a capacitively-coupled radio-frequency (rf, 13.56 MHz) SF6 plasma have been investigated as functions of the pressure (30-700 mTorr) and rf power. The decay of the charged particle densities in the afterglow has also been studied to obtain information about their kinetics. The electron density was determined by using a microwave cavity resonance technique. Negative ions were detected by measuring the density of photodetached electrons produced by pulsed laser irradiation of the plasma. The positive ion density was obtained from Langmuir probe measurements. At a rf power of 0.13 W/cm2 and at low pressures (≲100 mTorr) the positive ion density, which is virtually equal to the negative ion density, is found to be larger than the electron density by a factor of a few hundred; the ion/electron density ratio increases with increasing pressure to reach a value of a few thousand at high pressures. Wavelength-dependent photodetachment measurements indicate that the dominant contribution to the photodetachment signal at 266 nm comes from F-, but F- is a minor negative-ion species with respect to the density; that is, the photodetachment efficiency for the dominant negative ion species (supposed to be SF-5) is low. The recombination rate constant for F- (supposedly with SF+5) is suggested to be an order of magnitude larger than that for the dominant ion species, the latter being estimated to be slightly smaller than 10-7 cm3 s-1. © 1994 American Institute of Physics.
引用
收藏
页码:7221 / 7230
页数:10
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←
1
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3
→
共 30 条
[21]
STUDY OF ELECTRON ATTACHMENT OF SF6 AND AUTO-DETACHMENT AND STABILIZATION OF SF-6
[J].
ODOM, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
ODOM, RW
;
SMITH, DL
论文数:
0
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0
h-index:
0
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SMITH, DL
;
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论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
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[J].
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论文数:
0
引用数:
0
h-index:
0
机构:
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COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
OLTHOFF, JK
;
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COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
VANBRUNT, RJ
;
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COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
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;
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COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
CHAMPION, RL
;
DOVERSPIKE, LD
论文数:
0
引用数:
0
h-index:
0
机构:
COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
COLL WILLIAM & MARY,DEPT PHYS,WILLIAMSBURG,VA 23185
DOVERSPIKE, LD
.
JOURNAL OF CHEMICAL PHYSICS,
1989,
91
(04)
:2261
-2268
[23]
COLLISIONAL DETACHMENT OF ELECTRONS IN SULFUR HEXAFLUORIDE
[J].
ONEILL, BC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,BROWNLOW HILL,POB 147,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,BROWNLOW HILL,POB 147,LIVERPOOL L69 3BX,ENGLAND
ONEILL, BC
;
CRAGGS, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,BROWNLOW HILL,POB 147,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,BROWNLOW HILL,POB 147,LIVERPOOL L69 3BX,ENGLAND
CRAGGS, JD
.
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS,
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(12)
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[24]
ENHANCEMENT OF THE NEGATIVE-ION FLUX TO SURFACES FROM RADIO-FREQUENCY PROCESSING DISCHARGES
[J].
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论文数:
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h-index:
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BEBERMAN, JH
论文数:
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h-index:
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VERDEYEN, JT
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h-index:
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UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,CHAMPAIGN,IL 61820
VERDEYEN, JT
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(04)
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[25]
ANALYSIS OF LOW-PRESSURE RF-GLOW DISCHARGES USING A CONTINUUM MODEL
[J].
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论文数:
0
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0
h-index:
0
机构:
UNIV HOUSTON, DEPT CHEM ENGN, HOUSTON, TX 77204 USA
UNIV HOUSTON, DEPT CHEM ENGN, HOUSTON, TX 77204 USA
PARK, SK
;
ECONOMOU, DJ
论文数:
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h-index:
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机构:
UNIV HOUSTON, DEPT CHEM ENGN, HOUSTON, TX 77204 USA
UNIV HOUSTON, DEPT CHEM ENGN, HOUSTON, TX 77204 USA
ECONOMOU, DJ
.
JOURNAL OF APPLIED PHYSICS,
1990,
68
(08)
:3904
-3915
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SPATIOTEMPORAL OPTICAL-EMISSION SPECTROSCOPY OF RF DISCHARGES IN SF6
[J].
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h-index:
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机构:
UNIV BELGRADE, INST PHYS, YU-11080 ZEMUN, YUGOSLAVIA
UNIV BELGRADE, INST PHYS, YU-11080 ZEMUN, YUGOSLAVIA
PETROVIC, ZL
;
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UNIV BELGRADE, INST PHYS, YU-11080 ZEMUN, YUGOSLAVIA
MAKABE, T
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:2163
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[27]
ELECTRON-TRANSPORT, IONIZATION, ATTACHMENT, AND DISSOCIATION COEFFICIENTS IN SF6 AND ITS MIXTURES
[J].
PHELPS, AV
论文数:
0
引用数:
0
h-index:
0
机构:
NBS,GAITHERSBURG,MD 20899
NBS,GAITHERSBURG,MD 20899
PHELPS, AV
;
VANBRUNT, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
NBS,GAITHERSBURG,MD 20899
NBS,GAITHERSBURG,MD 20899
VANBRUNT, RJ
.
JOURNAL OF APPLIED PHYSICS,
1988,
64
(09)
:4269
-4277
[28]
PLASMA DIAGNOSTICS OF A SF6 RADIOFREQUENCY DISCHARGE USED FOR THE ETCHING OF SILICON
[J].
PICARD, A
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Nantes, Fr, CNRS, Nantes, Fr
PICARD, A
;
TURBAN, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Nantes, Fr, CNRS, Nantes, Fr
TURBAN, G
;
GROLLEAU, B
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Nantes, Fr, CNRS, Nantes, Fr
GROLLEAU, B
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1986,
19
(06)
:991
-1005
[29]
SMIRNOV BM, 1982, NEGATIVE IONS, pCH5
[30]
COLLISIONAL ELECTRON DETACHMENT AND DECOMPOSITION CROSS-SECTIONS FOR SF6-, SF5-, AND F- ON SF6 AND RARE-GAS TARGETS
[J].
WANG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
WANG, YC
;
CHAMPION, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
CHAMPION, RL
;
DOVERSPIKE, LD
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
DOVERSPIKE, LD
;
OLTHOFF, JK
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
OLTHOFF, JK
;
VANBRUNT, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
VANBRUNT, RJ
.
JOURNAL OF CHEMICAL PHYSICS,
1989,
91
(04)
:2254
-2260
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