LOW-TEMPERATURE SATURATION OF CHANNEL CONDUCTIVITY IN SILICON INVERSION LAYERS

被引：7

作者：

SJOSTRAND, ME ^{[1
]}

COLE, T ^{[1
]}

STILES, PJ ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90115-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：72 / 78

页数：7

共 15 条

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[8]

MOTT NF, 1971, ELECTRONIC PROCESSES

[9] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J].

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[10] SPATIAL EXTENT OF LOCALIZED STATE WAVEFUNCTIONS IN SILICON INVERSION LAYERS [J].

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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (15) :L273-L277

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