THE CONNECTION BETWEEN CARRIER LIFETIME AND DOPING DENSITY IN NONDEGENERATE SEMICONDUCTORS

被引：78

作者：

LANDSBERG, PT

KOUSIK, GS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1696 / 1700

页数：5

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