300-ELEMENT SILICON-LITHIUM POSITION-SENSITIVE IMAGING DETECTOR FOR ANGIOGRAPHY

被引：16

作者：

WALTON, JT ^{[1
]}

SOMMER, HA ^{[1
]}

THOMPSON, AC ^{[1
]}

HUGHES, EB ^{[1
]}

ZEMAN, HD ^{[1
]}

机构：

[1] STANFORD UNIV,HANSEN LAB PHYS,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/TNS.1986.4337160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：537 / 541

页数：5

共 14 条

[1] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].

BROWN, WL .

PHYSICAL REVIEW, 1953, 91 (03) :518-527

[2] CHARACTERIZATION OF LARGE DIAMETER SILICON BY LOW-BIAS CHARGE COLLECTION ANALYSIS IN SI(LI) PIN DIODES [J].

FONG, A ;

WALTON, JT ;

HALLER, EE ;

SOMMER, HA ;

GULDBERG, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (03) :623-630

[3]

GILLESPIE AB, 1970, ELECTRONICS NUCLEAR

[4]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] BEHAVIOR OF LITHIUM IN SILICON [J].

GUISLAIN, HJ ;

SCHOENMAEKERS, WK ;

DELAET, LH .

NUCLEAR INSTRUMENTS & METHODS, 1972, 101 (01) :1-+

[6] OXIDE-PASSIVATED SILICON P-N JUNCTION PARTICLE DETECTORS [J].

HANSEN, WL ;

GOULDING, FS .

NUCLEAR INSTRUMENTS & METHODS, 1964, 29 (02) :345-347

[7]

HUGHES EB, 1985, UNPUB NUCL INSTR MET

[8] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON [J].

ILES, PA ;

COPPEN, PJ .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) :1514-1514

[9]

LLACER J, 1964, IEEE T NUCL SCI, V11, P345

[10] GOLD-MASK TECHNIQUE FOR FABRICATING SEGMENTED-ELECTRODE GERMANIUM DETECTORS [J].

LUKE, PN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (01) :312-315

← 1 2 →