BEHAVIOR OF LITHIUM IN SILICON

被引：9

作者：

GUISLAIN, HJ

SCHOENMAEKERS, WK

DELAET, LH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1972年 / 101卷 / 01期

关键词：

D O I：

10.1016/0029-554X(72)90746-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1 / +

页数：1

共 26 条

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[3]

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FRISCH, HL ;

REISS, H .

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[7]

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[8] PRECIPITATION OF LITHIUM IN GERMANIUM DURING ION DRIFT [J].

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[9]

KIV AE, 1970, SOV PHYS SEMICOND+, V3, P990

[10] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J].

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APPLIED PHYSICS LETTERS, 1970, 16 (03) :100-&

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