学术探索
学术期刊
新闻热点
数据分析
智能评审

THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .2. THEORETICAL FOUNDATIONS AND INCORPORATION EQUATIONS

被引：2
作者：
KUHNE, H
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 05期
关键词：
D O I：
10.1002/crat.2170220509
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：669 / 676
页数：8
相关论文
共 6 条
[1]  
DUCHEMIN JP, 1977, REV TECHNIQUE THOMSO, V9, P411
[2]  
HINTZEN HTJ, 1984, J ELECTROCHEM SOC AM, V131, P1982
[3]   DECOMPOSITION EQUILIBRIUM OF ARSINE AND LOW-PRESSURE DOPING OF EPITAXIAL CVD SILICON [J].
KOKOVIN, GA ;
TESTOVA, NA ;
TITOV, AA ;
MORGENSTERN, T ;
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (12) :1583-1593
[4]   THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .1. EMPIRICAL FOUNDATIONS AND PROCESS-CONTROLLING EQUATIONS [J].
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (04) :487-494
[5]   KINETICS OF THE INCORPORATION OF DOPANTS INTO EPITAXIAL CVD SILICON [J].
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (10) :1217-1225
[6]   SUPPRESSION OF EPITAXIAL SILICON LAYER DOPING WITH BORON IN THE PRESENCE OF HYDROGEN-CHLORIDE [J].
MORGENSTERN, T ;
KUHNE, H ;
KOKOVIN, GA ;
TESTOVA, NA ;
TITOV, AA .
CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (01) :75-83
1