CHARACTERIZATION OF ION DAMAGE ON P-TYPE CADMIUM TELLURIDE SURFACES

[1] LOW RESISTANCE CONTACTS TO P-TYPE CADMIUM TELLURIDE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 89 - 109

[2] Basol B. M., 1985, Journal of Applied Physics, V58, P3809, DOI 10.1063/1.335595

[3] BEAN JC, 1979, APPL PHYS LETT, V35, P935

[4] BODAKOV YA, 1960, SOV PHYS-SOL STATE, V2, P49

[5] SPUTTERED INDIUM-TIN OXIDE-CADMIUM TELLURIDE JUNCTIONS AND CADMIUM TELLURIDE SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2175 - 2183

[6] FAHRENBRUCH AL, 1987, 19TH P IEEE PHOT SPE, P1309

[7] FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P230

[8] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1145 - 1146

[9] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713

[10] IONIZED ZN DOPING OF GAAS MOLECULAR-BEAM EPITAXIAL-FILMS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 342 - 344

[1] LOW RESISTANCE CONTACTS TO P-TYPE CADMIUM TELLURIDE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 89 - 109

[2] Basol B. M., 1985, Journal of Applied Physics, V58, P3809, DOI 10.1063/1.335595

[3] BEAN JC, 1979, APPL PHYS LETT, V35, P935

[4] BODAKOV YA, 1960, SOV PHYS-SOL STATE, V2, P49

[5] SPUTTERED INDIUM-TIN OXIDE-CADMIUM TELLURIDE JUNCTIONS AND CADMIUM TELLURIDE SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2175 - 2183

[6] FAHRENBRUCH AL, 1987, 19TH P IEEE PHOT SPE, P1309

[7] FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P230

[8] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1145 - 1146

[9] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713

[10] IONIZED ZN DOPING OF GAAS MOLECULAR-BEAM EPITAXIAL-FILMS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 342 - 344